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SC8611S - Dual N-Channel Enhancement Mode Field Effect Transistor

Features

  • Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW BOTTOM VIEW 1.77 4x 0.25 0.03 3.54 8611S Date Code 1.25 0.03 43 52 61 Mark area 1-pin index mark S1 3 2x φ 0.25 0.03 2 1 0.10 0.01 4 5 6 0.25 0.5.

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Datasheet Details

Part number SC8611S
Manufacturer SamHop
File Size 114.38 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SC8611S Datasheet
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Full PDF Text Transcription

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SC8611SGreen Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor Ver 2.0 PRODUCT SUMMARY VSSS IS RSS(ON) (mΩ) Typ 2.4 @ VGS=4.5V 2.5 @ VGS=4.0V 12V 11A 2.6 @ VGS=3.8V 3.3 @ VGS=3.1V 4.0 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW BOTTOM VIEW 1.77 4x 0.25 0.03 3.54 8611S Date Code 1.25 0.03 43 52 61 Mark area 1-pin index mark S1 3 2x φ 0.25 0.03 2 1 0.10 0.01 4 5 6 0.25 0.5 ABSOLUTE MAXIMUM RATINGS (TA=25°C) Symbol Parameter Limit VSSS Source-Source Voltage 12 VGSS IS ISP Gate-Source Voltage Source Current-Continuous c -Pulsed a c ±8 11 110 PT Total Power Dissipation 2.
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