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SC8612 - Dual N-Channel Enhancement Mode Field Effect Transistor

Features

  • Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW BOTTOM VIEW 1.77 4x 0.25 0.03 3.54 8612 Date Code 1.25 0.03 43 52 61 Mark area 1-pin index mark S1 3 2x φ 0.25 0.03 2 1 0.16 0.01 4 5 6 0.25 0.5.

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Datasheet Details

Part number SC8612
Manufacturer SamHop
File Size 90.64 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SC8612 Datasheet
Additional preview pages of the SC8612 datasheet.

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Full PDF Text Transcription

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Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor SC8612 Preliminary PRODUCT SUMMARY VSSS IS RSS(ON) (mΩ) Typ 4.2 @ VGS=4.5V 4.3 @ VGS=4.0V 20V 27A 4.4 @ VGS=3.8V 4.9 @ VGS=3.1V 5.6 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW BOTTOM VIEW 1.77 4x 0.25 0.03 3.54 8612 Date Code 1.25 0.03 43 52 61 Mark area 1-pin index mark S1 3 2x φ 0.25 0.03 2 1 0.16 0.01 4 5 6 0.25 0.5 ABSOLUTE MAXIMUM RATINGS (TA=25°C) Symbol Parameter Limit VSSS Source-Source Voltage 20 VGSS IS ISP Gate-Source Voltage Source Current-Continuous a -Pulsed b ±8 27 100 PT Total Power Dissipation a 2.
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