SamHop STM102D
Dual Enhancement Mode Field Effect Transistor
| Part No. | STM102D |
|---|---|
| Datasheet | STM102D Download |
| Manufacturer |  SamHop |
| Description | Dual Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a TC=25°C TC=70°C N-Channel P-Channel -100 100 ±20 ±20 -1.3 2.0 1.6 7.2 16 -1.0 -4.7 25 2 1.28 -55 to 150 Units V V A A A mJ W W °C Sigle Pulse Avalanche Energy Maximum Power Dissipation a TC=25°C TC=70°C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 62.5 °C/W Details are subject to change without notice. Nov,30,2011 1 STM102D Ver 1.0 N-ChannelELECTRICAL CHARACTERISTICS
( T C=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=250uA VDS=80V , VGS=0V Min 100 Typ Max Units V uA nA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Tran...
