The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Green Product
Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
STM4417
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mW) Max
-40V
-10A
14 @ VGS=-10V 19 @ VGS=-4.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package.
S O-8
1
D5 D6 D7 D8
4G 3S 2S 1S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a e
TA=25°C TA=70°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TA=25°C TA=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
Limit -40 ±20 -10 -8 -56 56 2.5 1.
STM4417 Datasheet
