SamHop STM4417
P-Channel Enhancement Mode Field Effect Transistor
| Part No. | STM4417 |
|---|---|
| Datasheet | STM4417 Download |
| Manufacturer |  SamHop |
| Description | P-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. S O-8 1 D5 D6 D7 D8 4G 3S 2S 1SABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a e TA=25°C TA=70°C IDM -Pulsed b EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation a TA=25°C TA=70°C TJ, TSTG Operating Junction and Storage Temperature Range Limit -40 ±20 -10 -8 -56 56 2.5 1.6 -55 to 150 Units V V A A A mJ W W °C THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 50 °C/W Details are subject to change without notice. 1 Apr,24,2013 STM4417 Ver 1.0ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted) Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=-250uA VDS= -32V , VGS=0V VGS= ±20V , VDS=0V -40 ON CHARACTERISTICS VGS(th) Gate Thres...
