The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Green Product
STM8309
Oct.13, 2006
SamHop Microelectronics Corp.
Dual Enhancement Mode Field Effect Transistor ( N and P Channel)
PRODUCT SUMMARY
VDSS
30V
(N-Channel)
Max
PRODUCT SUMMARY
VDSS
-30V
(P-Channel)
ID
7A
RDS(ON) ( m Ω )
ID
-6A
RDS(ON) ( m Ω ) Max
35 @ VGS = -10V
52 @ VGS = -4.5V
23 @ VGS = 10V
30 @ VGS = 4.5V
D1
8
D1
7
D2
6
D2
5
SO-8
1
1 2
3
4
S1
G1
S2
G2
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a@TJ=25 C b -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation
a a
Symbol
N-Channel P-Channel
30
20
7 28
Unit V V A A A W C
VDS VGS ID IDM IS PD TJ, TSTG
-30
20
-6
-24
1.7
-1.7
2.