SamHop STM8456
Dual Enhancement Mode Field Effect Transistor
| Part No. | STM8456 |
|---|---|
| Datasheet | STM8456 Download |
| Manufacturer |  SamHop |
| Description | Dual Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage a N-Channel 40 ±20 TA=25°C TA=70°C d P-Channel -40 ±20 -5.3 -4.2 -22 16 2 1.28 Units V V A A A mJ W °C Drain Current-Continuous -Pulsed b 6.2 4.9 25 9 Single Pulse Avalanche Energy Maximum Power Dissipation a TA=25°C TA=70°C Operating Junction and Storage Temperature Range -55 to 150 THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 62.5 °C/W Details are subject to change without notice. May,29,2008 1 STM8456 Ver 1.0 N-ChannelELECTRICAL CHARACTERISTICS
( T A=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=250uA VDS=32V , VGS=0V Min Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c a...
