SamHop STM8457
Dual Enhancement Mode Field Effect Transistor
| Part No. | STM8457 |
|---|---|
| Datasheet | STM8457 Download |
| Manufacturer |  SamHop |
| Description | Dual Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @Ta -Pulsed b a Symbol VDS VGS 25 C 70 C ID IDM a N-Channel P-Channel 40 20 6 5.1 28 1.7 2 -40 20 -5 -4.2 -20 -1.7 Unit V V A A A A Drain-Source Diode Forward Current Maximum Power Dissipation Operating Junction and Storage Temperature Range a IS Ta= 25 C PD Ta=70 C TJ, TSTG 1.44 -55 to 150 W C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 1 62.5 C /W STM8457 N-ChannelELECTRICALCHARACTERISTICS (TA=25Cunlessotherwisenoted) Parameter 5 Symbol BVDSS IDSS IGSS b Condition VGS = 0V, ID = 250uA VDS = 32V, VGS = 0V VGS 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID =5A VGS = 4.5V, ID = 4A VDS = 5V, VGS = 10V VDS = 5V, ID = 5A Min Typ C Max Unit 40 1 10 1.4 1.8 20 27 20 15 750 125 75 3.0 26 33 V uA uA V m ohm m ohm OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS Ga...
