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r Pr
STP15L01/F
Ver1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
100V
ID
15A
R DS(ON) (m Ω) Typ
110 @ VGS=10V 121 @ VGS=4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-220F Package.
D
G D S
G D S
G
STP SERIES TO-220
STF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM E AS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a
TO-220 ±20 TC=25°C TC=70°C 15 12.6 45
TO-220F 100 ±20 15 45 25 25 17.5
e e e
Units V V A A A mJ W W °C
12.
STP15L01 Datasheet
