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STP15L01F - N-Channel Enhancement Mode Field Effect Transistor

Download the STP15L01F datasheet PDF. This datasheet also covers the STP15L01 variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-220F Package. D G D S G D S G STP SERIES TO-220 STF SERIES TO-220F S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP15L01_SamHop.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number STP15L01F
Manufacturer SamHop
File Size 238.12 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet STP15L01F Datasheet

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Other Datasheets by SamHop

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
r Pr STP15L01/F Ver1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V ID 15A R DS(ON) (m Ω) Typ 110 @ VGS=10V 121 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-220F Package. D G D S G D S G STP SERIES TO-220 STF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM E AS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a TO-220 ±20 TC=25°C TC=70°C 15 12.6 45 TO-220F 100 ±20 15 45 25 25 17.5 e e e Units V V A A A mJ W W °C 12.