SamHop STU313D
Dual Enhancement Mode Field Effect Transistor
| Part No. | STU313D |
|---|---|
| Datasheet | STU313D Download |
| Manufacturer |  SamHop |
| Description | Dual Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM I AS EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous b a N-Channel P-Channel 30 -30 ±20 ±20 TC=25°C TC=70°C 16 12.5 45 L=0.5mH TC=25°C TC=70°C 7.5 14 10 6.5 -55 to 150 -15 -11.5 -43 5.0 6.3 Units V V A A A A mJ W W °C -Pulsed Sigle Pulse Avalanche Current d Sigle Pulse Avalanche Energy d Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS a R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient a 12 60 °C/W °C/W Details are subject to change without notice. Jul,30,2008 1 STU313D Ver 1.0 N-ChannelELECTRICAL CHARACTERISTICS
( T C=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RD...
