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STU313D
S a mHop Microelectronics C orp.
Ver 1.0
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
PRODUCT SUMMARY (N-Channel)
V DSS
30V
PRODUCT SUMMARY (P-Channel)
V DSS
-30V
ID
16A
R DS(ON) (m Ω) Max
24 @ VGS=10V
ID
-15A
R DS(ON) (m Ω) Max
33 @ VGS=-10V 52 @ VGS=-4.5V
35 @ VGS=4.5V
D1/D2
G1
D1
D2
G2
S1
G1 S2 G2 TO-252-4L
S1
N-ch
S2
P -ch
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM I AS EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous
b a
N-Channel P-Channel 30 -30 ±20 ±20 TC=25°C TC=70°C 16 12.5 45 L=0.5mH TC=25°C TC=70°C 7.5 14 10 6.5 -55 to 150 -15 -11.5 -43 5.0 6.