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K4H1G0638B Datasheet

Ddr Sdram Stacked 1gb B-die (x4/x8)

Manufacturer: Samsung Electronics

Datasheet Details

Part number K4H1G0638B
Manufacturer Samsung Electronics
File Size 237.59 KB
Description DDR SDRAM stacked 1Gb B-die (x4/x8)
Datasheet K4H1G0638B_SamsungElectronics.pdf

K4H1G0638B Overview

Row & Column address configuration Rev. DDR SDRAM stacked 1Gb B-die (x4/x8) Package Physical.

K4H1G0638B Key Features

  • Double-data-rate architecture; two data transfers per clock cycle
  • Bidirectional data strobe DQS
  • Four banks operation
  • Differential clock inputs(CK and CK)
  • DLL aligns DQ and DQS transition with CK transition
  • MRS cycle with address key programs -. Read latency 2, 2.5 (clock) -. Burst length (2, 4, 8) -. Burst type (sequential &
  • All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
  • Data I/O transactions on both edges of data strobe
  • Edge aligned data output, center aligned data input
  • DM for write masking only (x4, x8)

K4H1G0638B Distributor