K9KAG08U1M
K9KAG08U1M is FLASH MEMORY manufactured by Samsung Electronics.
FEATURES
- Voltage Supply
- 2.7V Device(K9F8G08B0M) : 2.5V ~ 2.9V
- 3.3V Device(K9F8G08U0M) : 2.7V ~ 3.6V
- Organization
- Memory Cell Array : (1G + 32M) x 8bit
- Data Register : (4K + 128) x 8bit
- Automatic Program and Erase
- Page Program : (4K + 128)Byte
- Block Erase : (256K + 8K)Byte
- Page Read Operation
- Page Size : (4K + 128)Byte
- Random Read : 25µs(Max.)
- Serial Access : 25ns(Min.)
- Fast Write Cycle Time
- Page Program time : 200µs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
- mand/Address/Data Multiplexed I/O Port
- Hardware Data Protection
- Program/Erase Lockout During Power Transitions
- Reliable CMOS Floating-Gate Technology -Endurance : 100K Program/Erase Cycles(with 1bit/512Byte ECC)
- Data Retention : 10 Years
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