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K9LBG08U0M - FLASH MEMORY

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Samsung Electronics

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K9LBG08U0M FLASH MEMORY by Samsung Electronics - Datasheet Preview — Datasheet preview – K9LBG08U0M

Datasheet Details

Part number	K9LBG08U0M
Manufacturer	Samsung Electronics
File Size	1.49 MB
Description	FLASH MEMORY
Datasheet	K9LBG08U0M Datasheet
Additional preview pages of the K9LBG08U0M datasheet.

Product details

Description

Offered in 4Gx8bit, the K9LBG08U0M is a 32G-bit NAND Flash Memory with spare 1G-bit.

Features

Voltage Supply : 2.7 V ~ 3.6 V.
Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit.
Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (512K + 16K)Byte.
Page Read Operation - Page Size : (4K + 128)Byte - Random Read : 60µs(Max. ) - Serial Access : 25ns(Min. ).
K9MDG08U5M: 50ns(Min. ).
Memory Cell : 2bit / Memory Cell.
Fast Write Cycle Time - Program time : 800µs(Typ. ) - Block Er.

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Published: Sep 7, 2010 |