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K9LBG08U0M Datasheet Flash Memory

Manufacturer: Samsung Electronics

Overview: K9MDG08U5M K9LBG08U0M K9HCG08U1M Preliminary .. FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

K9LBG08U0M datasheet preview

Datasheet Details

Part number	K9LBG08U0M
Manufacturer	Samsung Electronics
File Size	1.49 MB
Description	FLASH MEMORY
Datasheet	K9LBG08U0M_SamsungElectronics.pdf

Key Features

Voltage Supply : 2.7 V ~ 3.6 V.
Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit.
Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (512K + 16K)Byte.
Page Read Operation - Page Size : (4K + 128)Byte - Random Read : 60µs(Max. ) - Serial Access : 25ns(Min. ).
K9MDG08U5M: 50ns(Min. ).
Memory Cell : 2bit / Memory Cell.
Fast Write Cycle Time - Program time : 800µs(Typ. ) - Block Er.

Similar Datasheet

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	K9LBG08U0D	4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory	Samsung semiconductor
	K9LBG08U0E	16Gb E-die NAND Flash	Samsung

More Datasheets from Samsung Electronics

Part Number	Description
K9LAG08U0M	Flash Memory
K9LAG08U1M	(K9XXG08UXM) Flash Memory

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