K9LBG08U0D - 4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory

This page provides the datasheet information for the K9LBG08U0D, a member of the K9LBG 4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory family.

Product Overview

Samsung semiconductor

Part number	K9LBG08U0D
Manufacturer	Samsung semiconductor
File Size	1.68 MB
Description	4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory
Datasheet	K9LBG08U0D Datasheet
Additional preview pages of the K9LBG08U0D datasheet.

Offered in 4Gx8bit, the K9LBG08U0D is a 32G-bit NAND Flash Memory with spare 1,744M-bit.

The device is offered in 3.3V Vcc.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Voltage Supply - 3.3V Device : 2.7V ~ 3.6V.
Organization - Memory Cell Array : (2G + 109M) x 8bit - Data Register : (4K + 218) x 8bit.
Automatic Program and Erase - Page Program : (4K + 218)Byte - Block Erase : (512K + 27.25K)Byte.
Page Read Operation - Page Size : (4K + 218)Byte - Random Read : 60µs(Max. ) - Serial Access : 30ns(Min. ).
K9XDG08U5D: 50ns(Min. ).
Memory Cell : 2bit / Memory Cell.
Fast Write Cycle Time - Program time : 800µs(.

Other Datasheets by Samsung semiconductor

Published: Oct 20, 2011 |