K9LBG08U0D Datasheet 4g X 8 Bit/ 8g X 8 Bit/ 16g X 8 Bit Nand Flash Memory

Manufacturer: Samsung Semiconductor

Overview: .DataSheet.co.kr K9HCG08U1D K9PDG08U5D K9LBG08U0D K9MDG08U5D Preliminary FLASH MEMORY K9XXG08UXD INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	K9LBG08U0D
Manufacturer	Samsung Semiconductor
File Size	1.68 MB
Description	4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory
Datasheet	K9LBG08U0D K9LBG Datasheet (PDF)

Key Features

Voltage Supply - 3.3V Device : 2.7V ~ 3.6V.
Organization - Memory Cell Array : (2G + 109M) x 8bit - Data Register : (4K + 218) x 8bit.
Automatic Program and Erase - Page Program : (4K + 218)Byte - Block Erase : (512K + 27.25K)Byte.
Page Read Operation - Page Size : (4K + 218)Byte - Random Read : 60µs(Max. ) - Serial Access : 30ns(Min. ).
K9XDG08U5D: 50ns(Min. ).
Memory Cell : 2bit / Memory Cell.
Fast Write Cycle Time - Program time : 800µs(.

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