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K3N5V1000F-DGC

Manufacturer: Samsung Semiconductor

K3N5V1000F-DGC datasheet by Samsung Semiconductor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

K3N5V1000F-DGC datasheet preview

K3N5V1000F-DGC Datasheet Details

Part number K3N5V1000F-DGC
Datasheet K3N5V1000F-DGC K3N5V1000F-DC Datasheet (PDF)
File Size 67.02 KB
Manufacturer Samsung Semiconductor
Description 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM
K3N5V1000F-DGC page 2 K3N5V1000F-DGC page 3

K3N5V1000F-DGC Overview

Because of its asynchronous operation, it requires no external clock assuring extremely easy operation. It is suitable for use in program memory of microprocessor, and data memory, character generator. The K3N5V(U)1000F-DC is packaged in a 42-DIP and the K3N5V(U)1000F-GC in a 44-SOP.

K3N5V1000F-DGC Key Features

  • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode)
  • Supply voltage : single +3.0V/single +3.3V
  • Current consumption Operating : 40mA(Max.) Standby : 30µA(Max.)
  • Fully static operation
  • All inputs and outputs TTL patible
  • Three state outputs
  • Package -. K3N5V(U)1000F-DC : 42-DIP-600 -. K3N5V(U)1000F-GC : 44-SOP-600
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