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K3N5V1000F-DC Datasheet

16m-bit (2mx8 / 1mx16) CMOS Mask Rom

Manufacturer: Samsung Semiconductor

K3N5V1000F-DC Overview

Because of its asynchronous operation, it requires no external clock assuring extremely easy operation. It is suitable for use in program memory of microprocessor, and data memory, character generator. The K3N5V(U)1000F-DC is packaged in a 42-DIP and the K3N5V(U)1000F-GC in a 44-SOP.

K3N5V1000F-DC Key Features

  • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode)
  • Supply voltage : single +3.0V/single +3.3V
  • Current consumption Operating : 40mA(Max.) Standby : 30µA(Max.)
  • Fully static operation
  • All inputs and outputs TTL patible
  • Three state outputs
  • Package -. K3N5V(U)1000F-DC : 42-DIP-600 -. K3N5V(U)1000F-GC : 44-SOP-600

K3N5V1000F-DC Distributor