K3N5VU1000F-DGC Datasheet (Samsung Semiconductor)

Part K3N5VU1000F-DGC
Description 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM
Manufacturer Samsung Semiconductor
Size 67.02 KB
Samsung Semiconductor

K3N5VU1000F-DGC Overview

Description

The K3N5V(U)1000F-D(G)C is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 2,097,152 x 8 bit(byte mode) or as 1,048,576x16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with 3.0V or 3.3V power supply, and all inputs and outputs are TTL compatible. Because of its asynchronous operation, it requires no external clock assuring extremely easy operation.

Key Features

  • Supply voltage : single +3.0V/single +3.3V
  • Current consumption Operating : 40mA(Max.) Standby : 30µA(Max.)
  • Fully static operation
  • All inputs and outputs TTL compatible
  • Three state outputs