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K3N5VU1000F-DGC Datasheet

16m-bit (2mx8 / 1mx16) CMOS Mask Rom

Manufacturer: Samsung Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

K3N5VU1000F-DGC Overview

Because of its asynchronous operation, it requires no external clock assuring extremely easy operation. It is suitable for use in program memory of microprocessor, and data memory, character generator. The K3N5V(U)1000F-DC is packaged in a 42-DIP and the K3N5V(U)1000F-GC in a 44-SOP.

K3N5VU1000F-DGC Key Features

  • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode)
  • Supply voltage : single +3.0V/single +3.3V
  • Current consumption Operating : 40mA(Max.) Standby : 30µA(Max.)
  • Fully static operation
  • All inputs and outputs TTL patible
  • Three state outputs
  • Package -. K3N5V(U)1000F-DC : 42-DIP-600 -. K3N5V(U)1000F-GC : 44-SOP-600

More Datasheets from Samsung Semiconductor

See all Samsung Semiconductor datasheets

Part Number Description
K3N5VU1000F-DC 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM
K3N5VU1000D-TC 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM
K3N5V1000D-TC 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM
K3N5V1000F-DC 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM
K3N5V1000F-DGC 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM
K3N7U4000B 64M-Bit (4M X 16) CMOS Mask ROM
K3N7U4000C 64M-Bit (4M X 16) CMOS Mask ROM
K3N7V4000B 64M-Bit (4M X 16) CMOS Mask ROM
K3N7V4000C 64M-Bit (4M X 16) CMOS Mask ROM

K3N5VU1000F-DGC Distributor