K3N5VU1000D-TC - 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM

This page provides the datasheet information for the K3N5VU1000D-TC, a member of the K3N5V1000D-TC 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM family.

Product Overview

Samsung Semiconductor

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Datasheet Details

Part number	K3N5VU1000D-TC
Manufacturer	Samsung Semiconductor
File Size	81.04 KB
Description	16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM
Datasheet	K3N5VU1000D-TC Datasheet
Additional preview pages of the K3N5VU1000D-TC datasheet.

K3N5VU1000D-TC Product details

Description

The K3N5V(U)1000D-TC is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 2,097,152x8 bit(byte mode) or as 1,048,576x16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with 3.0V or 3.3V

Features

Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode).
Fast access time : 100ns(Max. ).
Supply voltage : single +3.0V/ single +3.3V.
Current consumption Operating : 40mA(Max. ) Standby : 30µA(Max. ).
Fully static operation.
All inputs and outputs TTL compatible.
Three state outputs www. DataSheet4U. com.
Package -. K3N5V(U)1000D-TC : 44-TSOP2-400 CMOS MASK ROM.

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Published: Dec 9, 2008 |