K3N5VU1000D-TC Datasheet | Samsung Semiconductor

FEATURES - Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) - Fast access time : 100ns(Max.) - Supply voltage : single +3.0V/ single +3.3V - Current consumption Operating : 40m A(Max.) Standby : 30µA(Max.) - Fully static operation - All inputs and outputs TTL patible - Three state outputs .. - Package -. K3N5V(U)1000D-TC : 44-TSOP2-400 CMOS MASK ROM GENERAL DESCRIPTION The K3N5V(U)1000D-TC is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 2,097,152x8 bit(byte mode) or as 1,048,576x16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with 3.0V or 3.3V power supply, and all inputs and outputs are TTL patible. Because of its asynchronous operation, it requires no external clock assuring extremely easy operation. It is suitable for use in program memory of microprocessor, and data memory, character generator. The K3N5V(U)1000D-TC is packaged in a 44-TSOP2. FUNCTIONAL BLOCK DIAGRAM A19 - . . . A0 A-1 . . . CE OE BHE CONTROL LOGIC Q0/Q8 Q7/Q15 PIN CONFIGURATION X BUFFERS AND DECODER MEMORY CELL MATRIX (1,048,576x16/ 2,097,152x8) N.C A18 A17 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 44 N.C 43 A19 42 A8 41 A9 40 A10 39 A11 38 A12 37 A13 36 A14 35 A15 34 A16 33 BHE 32 VSS 31 Q15/A-1 30 Q7 29 Q14 28 Q6 27 Q13 26 Q5 25 Q12 24 Q4 23 VCC Y BUFFERS AND DECODER SENSE AMP. DATA OUT BUFFERS A3 A2 A1 10 A0 11 CE 12 VSS 13 OE 14 Q0 15 Q8 16 Q1 17 Q9 18 Q2 19 Q10 20 Q3 21 TSOP2 Pin Name A0 - A19 Q0 - Q14 Q15 /A-1 BHE CE OE VCC VSS N.C Pin Function Address Inputs Data Outputs Output 15(Word mode)/ LSB Address(Byte mode) Word/Byte selection Chip Enable Output Enable Power Ground No Connection Q11 22 K3N5V(U)1000D-TC K3N5V(U)1000D-TC ABSOLUTE MAXIMUM RATINGS Item Voltage on Any Pin Relative to VSS Temperature Under Bias Storage Temperature Symbol VIN TBIAS TSTG Rating -0.3 to +4.5 -10 to +85 -55 to +150 CMOS MASK ROM Unit V °C °C...