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K3N7V4000B - 64M-Bit (4M X 16) CMOS Mask ROM

Download the K3N7V4000B datasheet PDF. This datasheet also covers the K3N7U4000B variant, as both devices belong to the same 64m-bit (4m x 16) cmos mask rom family and are provided as variant models within a single manufacturer datasheet.

General Description

The K3N7V(U)4000B-DC is a fully static mask programmable ROM organized 4,194,304x16 bit.

It is fabricated using silicongate CMOS process technology.

This device operates with 3.0V or 3.3V power supply, and all inputs and outputs are TTL compatible.

Key Features

  • Switchable organization 4,194,304 x 16(word mode).
  • Fast access time 3.3V Operation : 100ns(Max. )@CL=50pF, 120ns(Max. )@C L=100pF 3.0V Operation : 120ns(Max. )@CL=100pF.
  • Supply voltage : single +3.3V/ single +3.0V.
  • Current consumption Operating : 40mA(Max. ).
  • Fully static operation.
  • All inputs and outputs TTL compatible.
  • Three state outputs.
  • Package -. K3N7V(U)4000B-DC: 42-DIP-600 CMOS MASK ROM www. DataSheet4U. com.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K3N7U4000B_SamsungSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for K3N7V4000B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K3N7V4000B. For precise diagrams, and layout, please refer to the original PDF.

K3N7V(U)4000B-DC 64M-Bit (4Mx16) CMOS MASK ROM FEATURES • Switchable organization 4,194,304 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns...

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d mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@C L=100pF 3.0V Operation : 120ns(Max.)@CL=100pF • Supply voltage : single +3.3V/ single +3.0V • Current consumption Operating : 40mA(Max.) • Fully static operation • All inputs and outputs TTL compatible • Three state outputs • Package -. K3N7V(U)4000B-DC: 42-DIP-600 CMOS MASK ROM www.DataSheet4U.com GENERAL DESCRIPTION The K3N7V(U)4000B-DC is a fully static mask programmable ROM organized 4,194,304x16 bit. It is fabricated using silicongate CMOS process technology. This device operates with 3.0V or 3.3V power supply, and all inputs and outputs ar

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