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K3N7V4000B Datasheet

Manufacturer: Samsung Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

K3N7V4000B datasheet preview

Datasheet Details

Part number K3N7V4000B
Datasheet K3N7V4000B K3N7U4000B Datasheet (PDF)
File Size 54.50 KB
Manufacturer Samsung Semiconductor
Description 64M-Bit (4M X 16) CMOS Mask ROM
K3N7V4000B page 2 K3N7V4000B page 3

K3N7V4000B Overview

The K3N7V(U)4000B-DC is a fully static mask programmable ROM organized 4,194,304x16 bit. It is fabricated using silicongate CMOS process technology. This device operates with 3.0V or 3.3V power supply, and all inputs and outputs are TTL patible.

K3N7V4000B Key Features

  • Switchable organization 4,194,304 x 16(word mode)
  • Supply voltage : single +3.3V/ single +3.0V
  • Current consumption Operating : 40mA(Max.)
  • Fully static operation
  • All inputs and outputs TTL patible
  • Three state outputs
  • Package -. K3N7V(U)4000B-DC: 42-DIP-600
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