K3N7V4000B - 64M-Bit (4M X 16) CMOS Mask ROM

This page provides the datasheet information for the K3N7V4000B, a member of the K3N7U4000B 64M-Bit (4M X 16) CMOS Mask ROM family.

Product Overview

Samsung Semiconductor

Part number	K3N7V4000B
Manufacturer	Samsung Semiconductor
File Size	54.50 KB
Description	64M-Bit (4M X 16) CMOS Mask ROM
Datasheet	K3N7V4000B Datasheet
Additional preview pages of the K3N7V4000B datasheet.

The K3N7V(U)4000B-DC is a fully static mask programmable ROM organized 4,194,304x16 bit.

It is fabricated using silicongate CMOS process technology.

This device operates with 3.0V or 3.3V power supply, and all inputs and outputs are TTL compatible.

Switchable organization 4,194,304 x 16(word mode).
Fast access time 3.3V Operation : 100ns(Max. )@CL=50pF, 120ns(Max. )@C L=100pF 3.0V Operation : 120ns(Max. )@CL=100pF.
Supply voltage : single +3.3V/ single +3.0V.
Current consumption Operating : 40mA(Max. ).
Fully static operation.
All inputs and outputs TTL compatible.
Three state outputs.
Package -. K3N7V(U)4000B-DC: 42-DIP-600 CMOS MASK ROM www. DataSheet4U. com.

Other Datasheets by Samsung Semiconductor

K3N7V4000C - 64M-Bit (4M X 16) CMOS Mask ROM
K3N7U4000B - 64M-Bit (4M X 16) CMOS Mask ROM
K3N7U4000C - 64M-Bit (4M X 16) CMOS Mask ROM
K3N5V1000D-TC - 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM
K3N5V1000F-DC - 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM
K3N5V1000F-DGC - 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM
K3N5VU1000D-TC - 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM
K3N5VU1000F-DC - 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM

Published: Feb 11, 2011 |