Download the K4Q153211M datasheet PDF.
This datasheet also covers the K4Q153212M variant, as both devices belong to the same (k4q153211m / k4q153212m) 512kx32bit cmos quad casdram family and are provided as variant models within a single manufacturer datasheet.
General Description
This is a 524,288 x 32 bit Extended Data Out CMOS DRAM.
Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.
Key Features
of this family. All of this family have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 512Kx32 EDO Mode Quad CAS DRAM is fabricated using Samsung's advanced CMOS process to realize high band-width, low power consumption and high reliability.
Note: The manufacturer provides a single datasheet file (K4Q153212M_SamsungSemiconductor.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for K4Q153211M (Reference)
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K4Q153211M. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com K4Q153211M, K4Q153212M 512K x 32Bit CMOS Quad CAS DRAM with EDO DESCRIPTION CMOS DRAM This is a 524,288 x 32 bit Extended Data Out CMOS DRAM. Extended...
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DRAM This is a 524,288 x 32 bit Extended Data Out CMOS DRAM. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle 1K, access time (-50 or -60), power consumption(Normal or Low power) and SOJ package type are optional features of this family. All of this family have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 512Kx32 EDO Mode Quad CAS DRAM is fabricated using Samsung's advanced CMOS process to realize high band
K4Q153211M Datasheet
