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K4Q153212M - (K4Q153211M / K4Q153212M) 512kx32bit CMOS Quad Casdram

General Description

This is a 524,288 x 32 bit Extended Data Out CMOS DRAM.

Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.

Key Features

  • of this family. All of this family have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 512Kx32 EDO Mode Quad CAS DRAM is fabricated using Samsung's advanced CMOS process to realize high band-width, low power consumption and high reliability.

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Full PDF Text Transcription for K4Q153212M (Reference)

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www.DataSheet4U.com K4Q153211M, K4Q153212M 512K x 32Bit CMOS Quad CAS DRAM with EDO DESCRIPTION CMOS DRAM This is a 524,288 x 32 bit Extended Data Out CMOS DRAM. Extended...

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DRAM This is a 524,288 x 32 bit Extended Data Out CMOS DRAM. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle 1K, access time (-50 or -60), power consumption(Normal or Low power) and SOJ package type are optional features of this family. All of this family have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 512Kx32 EDO Mode Quad CAS DRAM is fabricated using Samsung's advanced CMOS process to realize high band

More Datasheets from Samsung Semiconductor

Part Number Description
K4Q153211M (K4Q153211M / K4Q153212M) 512kx32bit CMOS Quad Casdram