K4Q153212M Description
CMOS DRAM This is a 524,288 x 32 bit Extended Data Out CMOS DRAM. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle 1K, access time (-50 or -60), power consumption(Normal or Low power) and SOJ package type are optional.
K4Q153212M Key Features
- Part Identification
- K4Q153211M-JC (5.0V, 1K Ref.)
- K4Q153211M-JL (5.0V, 1K Ref. LP)
- K4Q153212M-JC (3.3V, 1K Ref.)
- K4Q153212M-JL (3.3V, 1K Ref. LP)
- Extended Data Out Mode operation (Fast Page Mode with Extended Data Out)
- Four separate CAS pins provide for separate I/O operation
- CAS-before-RAS refresh capability
- RAS-only and Hidden refresh capability
- Self-refresh capability (L-ver only)