K6T2008S2A - 256K X 8 Bit Low Power And Low Voltage CMOS Static RAM

Description

The K6T2008S2A families are fabricated by SAMSUNG′s advanced CMOS process technology.

The families support industrial temperature ranges and have small package types for user flexibility of system design.

Features

Process Technology: TFT.
Organization: 256Kx8.
Power Supply Voltage: 2.3 ~ 2.7V.
Low Data Retention Voltage: 2V(Min).
Three state output and TTL Compatible.
Package Type: 32-TSOP1-0813.4F, 48(36)-FBGA-6.00x7.00 CMOS SRAM.

Samsung Semiconductor

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Datasheet Details

Part number	K6T2008S2A
Manufacturer	Samsung Semiconductor
File Size	160.50 KB
Description	256K X 8 Bit Low Power And Low Voltage CMOS Static RAM
Datasheet	K6T2008S2A Datasheet
Additional preview pages of the K6T2008S2A datasheet.

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Full PDF Text Transcription

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Preliminary www.DataSheet4U.com K6T2008S2A Family Document Title 256Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 History Initial draft Draft Data April 27, 1998 Remark Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices. Revision 0.0 April 1999 Preliminary www.DataSheet4U.com K6T2008S2A Family 256Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES • Process Technology: TFT • Organization: 256Kx8 • Power Supply Voltage: 2.3 ~ 2.

Published: Jul 12, 2009 |