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KEF00F0000CM-EG00 - Flash Memory

This page provides the datasheet information for the KEF00F0000CM-EG00, a member of the KEF00F0000CM Flash Memory family.

Description

OneNANDTM (MCP of NAND Flash Interface chip and NAND Flash) allows standard NAND Flash chips to interface with OneNANDTM bus without performance penalty.

This device is 1.8V/2.6V operation and comprised of about 10,000 gates and 4KB internal Bufferwww.datasheet4u.com RAM.

Features

  • Design Technology: 0.25µm www. datasheet4u. com.
  • Voltage Supply - Main: 1.8V device(1.7V~1.95V) 2.6V device(2.4V~2.8V) - Host Interface & NAND Flash Interface: 1.8V device(1.7V~1.95V) 2.6V device(2.4V~2.8V).
  • Organization - Host Interface:16bit.
  • Internal BufferRAM - BootRAM at booting, Cache-like at normal operation FLASH MEMORY.
  • Architecture.
  • Performance.
  • Host Interface type - Synchronous Random Read : Clock Frequency: up to 45MHz.

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Datasheet preview – KEF00F0000CM-EG00

Datasheet Details

Part number KEF00F0000CM-EG00
Manufacturer Samsung Semiconductor
File Size 331.96 KB
Description Flash Memory
Datasheet download datasheet KEF00F0000CM-EG00 Datasheet
Additional preview pages of the KEF00F0000CM-EG00 datasheet.

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Full PDF Text Transcription

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OneNANDTM256 / OneNANDTM512 FLASH MEMORY www.datasheet4u.com OneNANDTMMCP SPECIFICATION NAND Density 256Mb NAND T.B.D KEF00F0000CM-EG00 KEF00F0000CM-SG00 512Mb NAND KEC00C00CM-EGG0 KEC00C00CM-SGG0 T.B.D 2.6V(2.4V~2.8V) 2.6V(2.4V~2.8V) 1.8V(1.7V~1.95V) 1.8V(1.7V~1.95V) Part No. VCC_core 1.8V(1.7V~1.95V) 2.6V(2.4V~2.8V) VCC_IO 1.8V(1.7V~1.95V) 2.6V(2.4V~2.8V) T.B.D 63FBGA(LF) 63FBGA 63FBGA(LF) 63FBGA T.B.D PKG Version: Ver. 0.0 Date: April 4, 2003 1 OneNANDTM256 / OneNANDTM512 1. FEATURES • Design Technology: 0.25µm www.datasheet4u.com • Voltage Supply - Main: 1.8V device(1.7V~1.95V) 2.6V device(2.4V~2.8V) - Host Interface & NAND Flash Interface: 1.8V device(1.7V~1.95V) 2.6V device(2.4V~2.
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