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KEF00F0000CM - Flash Memory

Description

OneNANDTM (MCP of NAND Flash Interface chip and NAND Flash) allows standard NAND Flash chips to interface with OneNANDTM bus without performance penalty.

This device is 1.8V/2.6V operation and comprised of about 10,000 gates and 4KB internal Bufferwww.datasheet4u.com RAM.

Features

  • Design Technology: 0.25µm www. datasheet4u. com.
  • Voltage Supply - Main: 1.8V device(1.7V~1.95V) 2.6V device(2.4V~2.8V) - Host Interface & NAND Flash Interface: 1.8V device(1.7V~1.95V) 2.6V device(2.4V~2.8V).
  • Organization - Host Interface:16bit.
  • Internal BufferRAM - BootRAM at booting, Cache-like at normal operation FLASH MEMORY.
  • Architecture.
  • Performance.
  • Host Interface type - Synchronous Random Read : Clock Frequency: up to 45MHz.

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Datasheet preview – KEF00F0000CM

Datasheet Details

Part number KEF00F0000CM
Manufacturer Samsung Semiconductor
File Size 331.96 KB
Description Flash Memory
Datasheet download datasheet KEF00F0000CM Datasheet
Additional preview pages of the KEF00F0000CM datasheet.

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Full PDF Text Transcription

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OneNANDTM256 / OneNANDTM512 FLASH MEMORY www.datasheet4u.com OneNANDTMMCP SPECIFICATION NAND Density 256Mb NAND T.B.D KEF00F0000CM-EG00 KEF00F0000CM-SG00 512Mb NAND KEC00C00CM-EGG0 KEC00C00CM-SGG0 T.B.D 2.6V(2.4V~2.8V) 2.6V(2.4V~2.8V) 1.8V(1.7V~1.95V) 1.8V(1.7V~1.95V) Part No. VCC_core 1.8V(1.7V~1.95V) 2.6V(2.4V~2.8V) VCC_IO 1.8V(1.7V~1.95V) 2.6V(2.4V~2.8V) T.B.D 63FBGA(LF) 63FBGA 63FBGA(LF) 63FBGA T.B.D PKG Version: Ver. 0.0 Date: April 4, 2003 1 OneNANDTM256 / OneNANDTM512 1. FEATURES • Design Technology: 0.25µm www.datasheet4u.com • Voltage Supply - Main: 1.8V device(1.7V~1.95V) 2.6V device(2.4V~2.8V) - Host Interface & NAND Flash Interface: 1.8V device(1.7V~1.95V) 2.6V device(2.4V~2.
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