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KEF00F0000CM Datasheet

Manufacturer: Samsung Semiconductor
KEF00F0000CM datasheet preview

KEF00F0000CM Details

Part number KEF00F0000CM
Datasheet KEF00F0000CM_SamsungSemiconductor.pdf
File Size 331.96 KB
Manufacturer Samsung Semiconductor
Description Flash Memory
KEF00F0000CM page 2 KEF00F0000CM page 3

KEF00F0000CM Overview

FLASH MEMORY OneNANDTM (MCP of NAND Flash Interface chip and NAND Flash) allows standard NAND Flash chips to interface with OneNANDTM bus without performance penalty. This device is 1.8V/2.6V operation and prised of about 10,000 gates and 4KB internal Buffer.. This 4KB BufferRAM is used as bootRAM during cold reset, and is used as cache RAM after cold reset.

KEF00F0000CM Key Features

  • Design Technology: 0.25µm
  • Voltage Supply
  • Main: 1.8V device(1.7V~1.95V) 2.6V device(2.4V~2.8V)
  • Host Interface & NAND Flash Interface: 1.8V device(1.7V~1.95V) 2.6V device(2.4V~2.8V)
  • Organization
  • Host Interface:16bit
  • Internal BufferRAM
  • BootRAM at booting, Cache-like at normal operation
  • Architecture
  • Performance

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