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KM23V32000D - (KM23x32000xTY) 32M-Bit CMOS Mask ROM

This page provides the datasheet information for the KM23V32000D, a member of the KM23S32000D (KM23x32000xTY) 32M-Bit CMOS Mask ROM family.

Datasheet Summary

Description

The KM23V32000D(E)TY and KM23S32000D(E)TY are fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 4,194,304 x8 bit(byte mode) or as 2,097,152x16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device opera

Features

  • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode).
  • Fast access time Random Access Time 3.3V/3.0V Operation : 100ns(Max. ) 2.5V Operation : 150ns(Max. ).
  • Supply voltage KM23V32000D(E)TY : single +3.0V/ single +3.3V KM23S32000D(E)TY : single +2.5V.
  • Current consumption Operating : 40mA(Max. ) Standby : 30µA(Max. ).
  • Fully static operation.
  • All inputs and outputs TTL compatible.
  • Three state outputs.
  • Package -. K.

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Datasheet preview – KM23V32000D

Datasheet Details

Part number KM23V32000D
Manufacturer Samsung Semiconductor
File Size 85.23 KB
Description (KM23x32000xTY) 32M-Bit CMOS Mask ROM
Datasheet download datasheet KM23V32000D Datasheet
Additional preview pages of the KM23V32000D datasheet.

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KM23V32000D(E)TY/KM23S32000D(E)TY 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time 3.3V/3.0V Operation : 100ns(Max.) 2.5V Operation : 150ns(Max.) • Supply voltage KM23V32000D(E)TY : single +3.0V/ single +3.3V KM23S32000D(E)TY : single +2.5V • Current consumption Operating : 40mA(Max.) Standby : 30µA(Max.) • Fully static operation • All inputs and outputs TTL compatible • Three state outputs • Package -.
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