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KM23V32005BG - 32M-Bit (4Mx8/2Mx16) COMS MASK ROM

Datasheet Summary

Description

The KM23V32005BG is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 4,194,304x8 bit(byte mode) or as 2,097,152x16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device includes page read mode functi

Features

  • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode).
  • Fast access time Random Access Time : 100ns(Max. ) Page Access Time : 30ns(Max. ).
  • 8 words / 16 bytes page access.
  • Supply voltage : single +3.3V.
  • Current consumption Operating : 60mA(Max. ) Standby : 30µ A(Max. ).
  • Fully static operation.
  • All inputs and outputs TTL compatible.
  • Three state outputs.
  • Package KM23V32005BG : 44-SOP-600 CMOS MASK ROM GE.

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Datasheet Details

Part number KM23V32005BG
Manufacturer Samsung semiconductor
File Size 87.00 KB
Description 32M-Bit (4Mx8/2Mx16) COMS MASK ROM
Datasheet download datasheet KM23V32005BG Datasheet
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KM23V32005BG 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time : 100ns(Max.) Page Access Time : 30ns(Max.) • 8 words / 16 bytes page access • Supply voltage : single +3.3V • Current consumption Operating : 60mA(Max.) Standby : 30µ A(Max.) • Fully static operation • All inputs and outputs TTL compatible • Three state outputs • Package KM23V32005BG : 44-SOP-600 CMOS MASK ROM GENERAL DESCRIPTION The KM23V32005BG is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 4,194,304x8 bit(byte mode) or as 2,097,152x16 bit(word mode) depending on BHE voltage level.
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