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KM718V849 - (KM736V749 / KM718V849) 128Kx36 & 256Kx18 Pipelined NtRAM

This page provides the datasheet information for the KM718V849, a member of the KM736V749 (KM736V749 / KM718V849) 128Kx36 & 256Kx18 Pipelined NtRAM family.

Datasheet Summary

Description

The KM736V749 and KM718V849 are 4,718,592 bits Synchronous Static SRAMs.

The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles.

Features

  • 3.3V+0.165V/-0.165V Power Supply.
  • I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
  • Byte Writable Function.
  • Enable clock and suspend operation.
  • Single READ/WRITE control pin.
  • Self-Timed Write Cycle.
  • Three Chip Enable for simple depth expansion with no data contention.
  • Α interleaved burst or a linear burst mode.
  • Asynchronous output enable control.
  • Power Down mode.

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Datasheet preview – KM718V849

Datasheet Details

Part number KM718V849
Manufacturer Samsung Semiconductor
File Size 288.41 KB
Description (KM736V749 / KM718V849) 128Kx36 & 256Kx18 Pipelined NtRAM
Datasheet download datasheet KM718V849 Datasheet
Additional preview pages of the KM718V849 datasheet.

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Full PDF Text Transcription

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KM736V749 KM718V849 Document Title 128Kx36 & 256Kx18 Pipelined NtRAMTM 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Changed tCD,tOE from 4.0ns to 4.2ns at -75 2. Changed DC condition at Icc and parameters ISB1 ; from 10mA to 30mA, ISB2 ; from 10mA to 30mA. Add VDDQ Supply voltage( 2.5V I/O ) Changed VOL Max value from 0.2V to 0.4V at 2.5V I/O. Final spec Release. Remove VDDQ Supply voltage( 2.5V I/O ) Add VDDQ Supply voltage( 2.5V I/O ) Draft Date July.06. 1998 Oct. 10 . 1998 Remark Preliminary Preliminary 0.2 0.3 1.0 2.0 3.0 Dec. 10. 1998 Dec. 23. 1998 Jan. 29. 1999 Feb. 25. 1999 May. 13. 1999 Preliminary Preliminary Final Final Final The attached data sheets are prepared and approved by SAMSUNG Electronics.
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