Download the K7M161835B datasheet PDF.
This datasheet also covers the K7M163635B variant, as both devices belong to the same 512kx36 & 1mx18 flow-through ntram family and are provided as variant models within a single manufacturer datasheet.
General Description
The K7M163635B and K7M161835B are 18,874,368-bits Synchronous Static SRAMs.
The NtRAMTM, or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles.
Key Features
VDD= 2.5 or 3.3V +/- 5% Power Supply.
Byte Writable Function.
Enable clock and suspend operation.
Single READ/WRITE control pin.
Self-Timed Write Cycle.
Three Chip Enable for simple depth expansion with no data contention.
Note: The manufacturer provides a single datasheet file (K7M163635B_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for K7M161835B (Reference)
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K7M161835B. For precise diagrams, and layout, please refer to the original PDF.
K7M163635B K7M161835B 512Kx36 & 1Mx18 Flow-Through NtRAMTM 18Mb NtRAMTM Specification 100TQFP/165FBGA with Pb/Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PRO...
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A with Pb/Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.
K7M161835B Datasheet
