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K7N641845M - 2Mx36 & 4Mx18 Pipelined NtRAM

Description

The K7N643645M and K7N641845M are 75,497,472-bits Synchronous Static SRAMs.

The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles.

Features

  • 2.5V ±5% Power Supply.
  • Byte Writable Function.
  • Enable clock and suspend operation.
  • Single READ/WRITE control pin.
  • Self-Timed Write Cycle.
  • Three Chip Enable for simple depth expansion with no data contention.
  • A interleaved burst or a linear burst mode.
  • Asynchronous output enable control.
  • Power Down mode.
  • TTL-Level Three-State Outputs.
  • 100-TQFP-1420A.
  • 165FBGA(11x15 ball aray) wi.

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Datasheet Details

Part number K7N641845M
Manufacturer Samsung Semiconductor
File Size 491.85 KB
Description 2Mx36 & 4Mx18 Pipelined NtRAM
Datasheet download datasheet K7N641845M Datasheet
Additional preview pages of the K7N641845M datasheet.

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Full PDF Text Transcription

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K7N643645M K7N641845M Document Title 2Mx36 & 4Mx18-Bit Pipelined NtRAMTM Preliminary 2Mx36 & 4Mx18 Pipelined NtRAMTM www.DataSheet4U.com Revision History Rev. No. 0.0 0.1 0.2 0.3 0.4 0.5 History 1. Initial document. 1. Delete the speed bins (FT : 7.5ns, 8.5ns / PP : 200MHz) 1. Change to the New JTAG scan order. 1. Add the comment about Vdd/Vddq wide by note on page 13. 1. Delete the 119 BGA package type. 1. Delete the 1.8V and 3.3V Vdd voltage level ( Change the part number to K7N6436(18)45M from K7N6436(18)31M ) Draft Date Sep. 30. 2002 Oct. 8. 2002 Feb. 25, 2003 Mar. 10, 2003 Aug. 18, 2004 Oct. 20, 2004 Remark Advance Preliminary Preliminary Preliminary Preliminary Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD.
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