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KM732V599A - 32K X 32Bit Synchronous Pipelined Burst SRAM

General Description

The KM732V599A/L is a 1,048,576-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

Key Features

  • Synchronous Operation. 2Stage Pipelined operation with 4Burst. On-Chip Address Counter. Self-Timed Write Cycle. On-Chip Address and Control Registers. VDD = 3.3V-5%/+10% Power Supply 5V Tolerant Inputs except I/O Pins Byte Writable Function. Global Write Enable Controls a full bus-width write. Power Down State via ZZ Signal. LBO Pin allow.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY KM732V599A/L Document Title 32Kx36-Bit Synchronous Pipelined Burst SRAM, 3.3V Power Datasheets for 100TQFP 32Kx32 Synchronous SRAM Revision History Rev. No. Rev.0.0 Rev.1.0 History Initial draft Final spec release Draft Date Feb. 18. 1997 May.13. 1997 Remark Preliminary Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- May 1997 Rev 1.0 PRELIMINARY KM732V599A/L FEATURES • • • • • • • • • • • • • • • • Synchronous Operation.