KM732V787 - 128Kx32-Bit Synchronous Burst SRAM

Datasheet Summary

Description

The KM732V787 is 4,194,304 bits Synchronous Static Random Access Memory designed to support zero wait state performance for advanced Pentium/Power PC based system.

And with CS1 high, ADSP is blocked to control signals.

It can be organized as 128K words of 32 bits.

Features

Synchronous Operation.
On-Chip Address Counter.
Write Self-Timed Cycle.
On-Chip Address and Control Registers.
VDD= 3.3V+0.3V/-0.165V Power Supply.
VDDQ Supply Voltage 3.3V+0.3V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
5V Tolerant Inputs except I/O Pins.
Byte Writable Function.
Global Write Enable Controls a full bus-width write.
Power Down State via ZZ Signal.
Asynchronou.

Samsung Semiconductor

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Datasheet Details

Part number	KM732V787
Manufacturer	Samsung Semiconductor
File Size	464.34 KB
Description	128Kx32-Bit Synchronous Burst SRAM
Datasheet	KM732V787 Datasheet
Additional preview pages of the KM732V787 datasheet.

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Full PDF Text Transcription

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KM732V787 Document Title 128Kx32-Bit Synchronous Burst SRAM 128Kx32 Synchronous SRAM Revision History Rev. No. 1.0 2.0 3.0 History Initial draft Modify Rev. No. from 0.0 to 1.0. Add VDDQ Supply voltage( 2.5V ) Draft Date May. 19. 1998 Jun. 02. 1998 Dec. 02. 1998 Remark Final Final Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- December 1998 Rev 3.0 KM732V787 128Kx32-Bit Synchronous Burst SRAM FEATURES • Synchronous Operation.

Published: Oct 28, 2005 |