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KMM53216000CK - 16MBx32 DRAM Simm Using 16MBx4

Description

The Samsung KMM53216000C is a 16Mx32bits Dynamic RAM high density memory module.

The Samsung KMM53216000C consists of eight CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate.

A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.

Features

  • Part Identification - KMM53216000CK(4K cycles/64ms Ref, SOJ, Solder) - KMM53216000CKG(4K cycles/64ms Ref, SOJ, Gold).
  • Fast Page Mode Operation.
  • CAS-before-RAS & Hidden Refresh capability.
  • RAS-only refresh capability.
  • TTL compatible inputs and outputs.
  • Single +5V±10% power supply.
  • JEDEC standard PDpin & pinout.
  • PCB : Height(1250mil), double sided component.

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Datasheet preview – KMM53216000CK

Datasheet Details

Part number KMM53216000CK
Manufacturer Samsung
File Size 386.76 KB
Description 16MBx32 DRAM Simm Using 16MBx4
Datasheet download datasheet KMM53216000CK Datasheet
Additional preview pages of the KMM53216000CK datasheet.

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Full PDF Text Transcription

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DRAM MODULE KMM53216000CK/CKG 4Byte 16Mx32 SIMM (16Mx4 base) Revision 0.0 JUNE 1998 DRAM MODULE Revision History Version 0.0 (JUNE 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM53216000CK/CKG DRAM MODULE KMM53216000CK/CKG Fast Page Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM53216000C is a 16Mx32bits Dynamic RAM high density memory module. The Samsung KMM53216000C consists of eight CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM53216000C is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.
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