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KMM53216000CK Datasheet 16mbx32 Dram Simm Using 16mbx4

Manufacturer: Samsung Semiconductor

Overview: DRAM MODULE KMM53216000CK/CKG 4Byte 16Mx32 SIMM (16Mx4 base) Revision 0.0 JUNE 1998 DRAM MODULE Revision History Version 0.0 (JUNE 1999) • The 4th. generation of 64Mb DRAM ponents are applied for this module.

General Description

The Samsung KMM53216000C is a 16Mx32bits Dynamic RAM high density memory module.

The Samsung KMM53216000C consists of eight CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate.

A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.

Key Features

  • Part Identification - KMM53216000CK(4K cycles/64ms Ref, SOJ, Solder) - KMM53216000CKG(4K cycles/64ms Ref, SOJ, Gold).
  • Fast Page Mode Operation.
  • CAS-before-RAS & Hidden Refresh capability.
  • RAS-only refresh capability.
  • TTL compatible inputs and outputs.
  • Single +5V±10% power supply.
  • JEDEC standard PDpin & pinout.
  • PCB : Height(1250mil), double sided component.

More Datasheets from Samsung Semiconductor

Part Number Description
KMM53216000BK 16MBx32 DRAM Simm Using 16MBx4
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KMM5321200C2W 1M x 32 DRAM SIMM
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KMM5322104CKU 2MB X 32 DRAM Simm Using 2MB X 8
KMM5322200C2W 2MBx32 DRAM Simm Using 1MBx16
KMM5322204C2W 2MBx32 DRAM Simm Using 1MBx16
KMM53232000BK 32MB X 32 DRAM Simm Using 16MBx4
KMM53232000CK 32MBx32 DRAM Simm Using 16MBx4

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