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KMM53216004BK - 16MBx32 DRAM Simm Using 16MBx4

Description

The Samsung KMM53216004B is a 16Mx32bits Dynamic RAM high density memory module.

The Samsung KMM53216004B consists of eight CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate.

A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.

Features

  • Part Identification - KMM53216004BK(4K cycles/64ms Ref, SOJ, Solder) - KMM53216004BKG(4K cycles/64ms Ref, SOJ, Gold).
  • Extended Data Out Mode Operation.
  • CAS-before-RAS & Hidden Refresh capability.
  • RAS-only refresh capability.
  • TTL compatible inputs and outputs.
  • Single +5V±10% power supply.
  • JEDEC standard PDpin & pinout.
  • PCB : Height(1250mil), double sided component.

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Datasheet preview – KMM53216004BK

Datasheet Details

Part number KMM53216004BK
Manufacturer Samsung
File Size 398.24 KB
Description 16MBx32 DRAM Simm Using 16MBx4
Datasheet download datasheet KMM53216004BK Datasheet
Additional preview pages of the KMM53216004BK datasheet.
Other Datasheets by Samsung Semiconductor

Full PDF Text Transcription

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DRAM MODULE KMM53216004BK/BKG EDO Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM53216004B is a 16Mx32bits Dynamic RAM high density memory module. The Samsung KMM53216004B consists of eight CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM53216004B is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.
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