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KMM53232004CK - 32MBx32 DRAM Simm Using 16MBx4

Description

The Samsung KMM53232004C is a 32Mx32bits Dynamic RAM high density memory module.

The Samsung KMM53232004C consists of sixteen CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate.

A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.

Features

  • Part Identification - KMM53232004CK(4K cycles/64ms Ref, SOJ, Solder) - KMM53232004CKG(4K cycles/64ms Ref, SOJ, Gold).
  • Extended Data Out Mode Operation.
  • CAS-before-RAS & Hidden Refresh capability.
  • RAS-only refresh capability.
  • TTL compatible inputs and outputs.
  • Single +5V ±10% power supply.
  • JEDEC standard PDpin & pinout.
  • PCB : Height(1420mil), double sided component.

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Datasheet preview – KMM53232004CK

Datasheet Details

Part number KMM53232004CK
Manufacturer Samsung
File Size 447.86 KB
Description 32MBx32 DRAM Simm Using 16MBx4
Datasheet download datasheet KMM53232004CK Datasheet
Additional preview pages of the KMM53232004CK datasheet.

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Full PDF Text Transcription

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DRAM MODULE KMM53232004CK/CKG 4Byte 32Mx32 SIMM (16Mx4 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM53232004CK/CKG DRAM MODULE KMM53232004CK/CKG EDO Mode 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM53232004C is a 32Mx32bits Dynamic RAM high density memory module. The Samsung KMM53232004C consists of sixteen CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM53232004C is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.
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