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KMM5324000BSW - 4MBx32 DRAM Simm Using 4MBx16

General Description

The Samsung KMM5324000B is a 4Mx32bits Dynamic RAM high density memory module.

The Samsung KMM5324000B consists of two CMOS 4Mx16bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate.

A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.

Key Features

  • Part Identification - KMM5324000BSW(4K cycles/64ms Ref, TSOP, Solder) - KMM5324000BSWG(4K cycles/64ms Ref, TSOP, Gold).
  • Fast Page Mode Operation.
  • CAS-before-RAS & Hidden Refresh capability.
  • RAS-only refresh capability.
  • TTL compatible inputs and outputs.
  • Single +5V±10% power supply.
  • JEDEC standard PDpin & pinout.
  • PCB : Height(1000mil), single sided component.

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Other Datasheets by Samsung Semiconductor

Part Number Description
KMM5324000CK (KMM5324100CK / KMM5324000CK) 4MBx32 DRAM Simm Using 4MBx4
KMM5324004BSW 4MBx32 DRAM Simm Using 4MBx16
KMM5324004CK (KMM5324104CK / KMM5324004CK) 4MBx32 DRAM Simm Using 4MBx4
KMM5324004CSW 4MBx32 DRAM Simm Using 4MBx16
KMM5324100CK (KMM5324100CK / KMM5324000CK) 4MBx32 DRAM Simm Using 4MBx4

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DRAM MODULE KMM5324000BSW/BSWG Fast Page Mode 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM5324000B is a 4Mx32bits Dynamic RAM high density memory module. The Samsung KMM5324000B consists of two CMOS 4Mx16bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM5324000B is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.