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KMM5324004CSW - 4MBx32 DRAM Simm Using 4MBx16

General Description

The Samsung KMM5324004C is a 4Mx32bits Dynamic RAM high density memory module.

The Samsung KMM5324004C consists of two CMOS 4Mx16bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate.

A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.

Key Features

  • Part Identification - KMM5324004CSW(4K cycles/64ms Ref, TSOP, Solder) - KMM5324004CSWG(4K cycles/64ms Ref, TSOP, Gold).
  • Extended Data Out Mode Operation.
  • CAS-before-RAS & Hidden Refresh capability.
  • RAS-only refresh capability.
  • TTL compatible inputs and outputs.
  • Single +5V±10% power supply.
  • JEDEC standard PDpin & pinout.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DRAM MODULE KMM5324004CSW/CSWG 4Byte 4Mx32 SIMM (4Mx16 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5324004CSW/CSWG DRAM MODULE KMM5324004CSW/CSWG EDO Mode 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM5324004C is a 4Mx32bits Dynamic RAM high density memory module. The Samsung KMM5324004C consists of two CMOS 4Mx16bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM5324004C is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.