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KMM5328000BSW - 4MBx32 DRAM Simm Using 4MBx16

Description

The Samsung KMM5324000B is a 4Mx32bits Dynamic RAM high density memory module.

The Samsung KMM5324000B consists of two CMOS 4Mx16bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate.

A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.

Features

  • Part Identification - KMM5324000BSW(4K cycles/64ms Ref, TSOP, Solder) - KMM5324000BSWG(4K cycles/64ms Ref, TSOP, Gold).
  • Fast Page Mode Operation.
  • CAS-before-RAS & Hidden Refresh capability.
  • RAS-only refresh capability.
  • TTL compatible inputs and outputs.
  • Single +5V±10% power supply.
  • JEDEC standard PDpin & pinout.
  • PCB : Height(1000mil), single sided component.

📥 Download Datasheet

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Other Datasheets by Samsung Semiconductor

Part Number Description
KMM5328000CK (KMM5328100CK / KMM5328000CK) 8MBx32 DRAM Simm Using 4MBx4
KMM5328004BSW 8MBx32 DRAM Simm Using 4MBx16
KMM5328004CSW 8MB X 32 DRAM Simm Using 4MB X 16
KMM5328100CK (KMM5328100CK / KMM5328000CK) 8MBx32 DRAM Simm Using 4MBx4
KMM5321200C2W 1M x 32 DRAM SIMM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DRAM MODULE KMM5324000BSW/BSWG Fast Page Mode 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM5324000B is a 4Mx32bits Dynamic RAM high density memory module. The Samsung KMM5324000B consists of two CMOS 4Mx16bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM5324000B is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.
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