Datasheet Details
| Part number | M53231600BJ0-C |
|---|---|
| Manufacturer | Samsung Semiconductor |
| File Size | 545.95 KB |
| Description | (M53231600BE0/BJ0-C) DRAM Module |
| Download | M53231600BJ0-C Download (PDF) |
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Overview: www.DataSheet4U.com DRAM MODULE M53231600BE0/BJ0-C 4Byte 16Mx32 SIMM (16Mx4 base) DataSheet4U.com DataShee Revision 0.1 June 1998 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DRAM MODULE Revision History Version 0.0 (Sept. 1997) M53231600BE0/BJ0-C • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd. generation of 64M DRAM components are applied for this module. et4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet4 U .com www.DataSheet4U.
Download the M53231600BJ0-C datasheet PDF. This datasheet also includes the M53231600BE0 variant, as both parts are published together in a single manufacturer document.
| Part number | M53231600BJ0-C |
|---|---|
| Manufacturer | Samsung Semiconductor |
| File Size | 545.95 KB |
| Description | (M53231600BE0/BJ0-C) DRAM Module |
| Download | M53231600BJ0-C Download (PDF) |
|
|
|
The Samsung M53231600BE0/BJ0-C is a 16Mx32bits Dynamic RAM high density memory module.
The Samsung M53231600BE0/BJ0-C consists of eight CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate.
A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.
| Part Number | Description |
|---|---|
| M53231600BE0 | (M53231600BE0/BJ0-C) DRAM Module |
| M53231600CE0 | (M53231600CE0/CJ0-C) DRAM Module |
| M53231600CJ0-C | (M53231600CE0/CJ0-C) DRAM Module |
| M53230224CE2 | (M53230224CE2/CJ2) DRAM Module |
| M53230224CJ2 | (M53230224CE2/CJ2) DRAM Module |
| M53230224DE2 | (M53230224DE2/DJ2) DRAM Module |
| M53230224DJ2 | (M53230224DE2/DJ2) DRAM Module |
| M53230400CB0 | (M532304x0CB0/CW0) DRAM Module |
| M53230400CW0 | (M532304x0CB0/CW0) DRAM Module |
| M53230400DB0 | (M532304x0DB0/DW0) DRAM Module |