K1S1616B1A Overview
The K1S1616B1A is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports dual chip selection for user interface.
K1S1616B1A Key Features
- Preliminary UtRAM
- Package Type: 48-FBGA-6.00x7.00
- 2Revision 0.0 October 2003