K1S1616BCA Datasheet | Samsung Semiconductor

Preliminary Document Title 1Mx16 bit Page Mode Uni-Transistor Random Access Memory .. Ut RAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark December 12, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. -1- Revision 0.0 December 2003 Preliminary 1M x 16 bit Page Mode Uni-Transistor CMOS RAM Features - - - - - .. Ut RAM GENERAL DESCRIPTION The K1S1616BCA is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current. Process Technology: CMOS Organization: 1M x16 bit Power Supply Voltage: 1.7~2.1V Three State Outputs patible with Low Power SRAM - Support 4 page read mode - Package Type: 48-FBGA-6.00x7.00 PRODUCT FAMILY Product Family Operating Temp. Vcc Range Speed (t RC) 70/85ns Power Dissipation Standby (ISB1, Max.) 80µA Operating (ICC2, Max.) 30m A PKG Type K1S1616BCA-I Industrial(-40~85°C)...