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K4E640812E - (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out

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Samsung semiconductor

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K4E640812E (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out by Samsung semiconductor - Datasheet Preview — Datasheet preview – K4E640812E

Datasheet Details

Part number	K4E640812E
Manufacturer	Samsung semiconductor
File Size	190.72 KB
Description	(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
Datasheet	K4E640812E Datasheet
Additional preview pages of the K4E640812E datasheet.

Product details

Description

This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs.

Features

of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 8Mx8 EDO Mode DRAM family is fabricate d using Samsung ′s advanced CMOS process to realize high band-width, low power consumption and high reliability.

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Published: Sep 27, 2005 |