K4H561638F Datasheet

Manufacturer: Samsung Semiconductor

Datasheet Details

Part number	K4H561638F
Datasheet	K4H561638F_Samsungsemiconductor.pdf
File Size	329.94 KB
Manufacturer	Samsung Semiconductor
Description	256Mb F-die DDR SDRAM Specification

Row & Column address configuration Rev. 1.3 October, 2004 DDR SDRAM 256Mb F-die (x8, x16) Package Physica.

Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe L(U)DQS
Four banks operation
Differential clock inputs(CK and CK)
DLL aligns DQ and DQS transition with CK transition
MRS cycle with address key programs -. Read latency 2, 2.5 (clock) -. Burst length (2, 4, 8) -. Burst type (sequential &
All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
Data I/O transactions on both edges of data strobe
Edge aligned data output, center aligned data input
LDM,UDM for write masking only (x16)

Part Number	Description	Other Manufacturers
K4H561638A-TCA0	128Mb DDR SDRAM	Samsung
K4H561638A-TCA2	128Mb DDR SDRAM	Samsung
K4H561638A-TCB0	128Mb DDR SDRAM	Samsung
K4H561638A-TLA0	128Mb DDR SDRAM	Samsung
K4H561638A-TLA2	128Mb DDR SDRAM	Samsung

Part Number	Description
K4H561638F-TCC4	256Mb F-die DDR400 SDRAM Specification
K4H561638F-TCCC	256Mb F-die DDR400 SDRAM Specification
K4H561638F-UCC4	256Mb F-die DDR400 SDRAM
K4H561638F-UCCC	256Mb F-die DDR400 SDRAM
K4H561638D-TCB3	256Mb D-die DDR Sdram
K4H561638H	(K4H560438H - K4H561638H) 256Mb H-die DDR SDRAM Specification
K4H561638J	256Mb J-die DDR SDRAM Specification
K4H560438D-TCB3	256Mb D-die DDR Sdram
K4H560438H	(K4H560438H - K4H561638H) 256Mb H-die DDR SDRAM Specification
K4H560438J	256Mb J-die DDR SDRAM Specification