Samsung semiconductor K4M51163LE
The K4M51163LE is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.| Part No. | K4M51163LE |
|---|---|
| Datasheet | K4M51163LE Download |
| Manufacturer |  Samsung semiconductor |
| Description | 8M x 16Bit x 4 Banks Mobile SDRAM |
| Buy | Stock & Price |
FEATURES
● 2.5V power supply.● LVCMOS compatible with multiplexed address.
● Four banks operation.
● MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
● EMRS cycle with address key programs.
● All inputs are sampled at the positive going edge of the system clock.
● Burst read single-bit write operation.
● Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh)
● DQM for masking.
● Auto refresh.
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● 64ms refresh period (8K cycle). Commercial Temperature Operation (-25°C ~ 70°C). 1 /CS Support. 2chips DDP 54Balls FBGA with 0.8mm ball pitch ( -YXXX : Leaded, -PXXX : Lead Free). Mobile-SDRAM
GENERAL DESCRIPTION
Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.
