K4M51163LE - 8M x 16Bit x 4 Banks Mobile SDRAM

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4M51163LE
Manufacturer	Samsung semiconductor
File Size	135.47 KB
Description	8M x 16Bit x 4 Banks Mobile SDRAM
Datasheet	K4M51163LE Datasheet
Additional preview pages of the K4M51163LE datasheet.

Product details

Description

The K4M51163LE is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

2.5V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR (Parti.

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Published: Dec 23, 2006 |