K4M51163PC-x Datasheet | Samsung Semiconductor

FEATURES 1.8V power supply. LVCMOS patible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). - EMRS .. cycle with address key programs. - All inputs are sampled at the positive going edge of the system clock. - Burst read single-bit write operation. - Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature pensated Self Refresh) -. DS (Driver Strength) -. DPD (Deep Power Down Mode) - DQM for masking. - Auto refresh. - 64ms refresh period (8K cycle). - mercial Temperature Operation (-25°C ~ 70°C). - Extended Temperature Operation (-25°C ~ 85°C). - 54Balls FBGA (-RXXX : Pb, -BXXX : Pb Free). - - - - Mobile SDRAM GENERAL DESCRIPTION The K4M51163PC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications. ORDERING INFORMATION Part No. K4M51163PC-R(B)E/G/C/F75 K4M51163PC-R(B)E/G/C/F90 K4M51163PC-R(B)E/G/C/F1L Max Freq. 133MHz(CL=3), 83MHz(CL=2) 111MHz(CL=3), 83MHz(CL=2) 111MHz(CL=3)- 1, 66MHz(CL=2) LVCMOS 54 FBGA Pb (Pb Free) Interface Package - R(B)E/G : Normal/Low Power, Extended Temperature(-25°C ~ 85°C) - R(B)C/F : Normal/Low Power, mercial Temperature(-25°C ~ 70°C) Notes : 1. In case of 40MHz Frequency, CL1 can be supported. Address configuration Organization 32M x 16 Bank BA0, BA1 Row A0 - A12 Column Address A0 - A9 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS...