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K4M51163PI - 512Mb I-die Mobile SDR SDRAM

General Description

4 3.0 ORDERING INFORMATION 4 4.0 Address configuration 4 5.0 FUNCTIONAL BLOCK DIAGRAM 5 6.0 Package Dimension and Pin Configuration 6 7.0 ABSOLUTE MAXIMUM RATINGS 7 8.0 DC OPERATING CONDITIONS 7 9.0 CAPACITANCE 7 10.0 DC CHARACTERISTICS 8 11.0 AC OPERATING TEST CONDITIONS 9 12.0 OPERATING A

Key Features

  • 4 2.0.

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📁 Similar Datasheet

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Other Datasheets by Samsung Semiconductor

Part Number Description
K4M51163PC-x 8M x 16Bit x 4 Banks Mobile SDRAM
K4M511633C 8M x 16Bit x 4 Banks Mobile SDRAM
K4M51163LC 8M x 16Bit x 4 Banks Mobile SDRAM
K4M51163LE 8M x 16Bit x 4 Banks Mobile SDRAM
K4M513233C 4M x 32Bit x 4 Banks Mobile SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Rev. 1.0, Dec. 2009 K4M51163PI 512Mb I-die Mobile SDR SDRAM 32Mb x16, 54FBGA with Lead-Free & Halogen-Free (VDD / VDDQ = 1.8V / 1.8V) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or otherwise.