K4M56163LG Overview
The K4M56163LG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device...
K4M56163LG Key Features
- 2.5V power supply
- LVCMOS patible with multiplexed address
- Four banks operation
- MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type
- EMRS cycle with address key programs
- All inputs are sampled at the positive going edge of the system clock
- Burst read single-bit write operation
- Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature pensated Self Refresh) -.
- DQM for masking
- Auto refresh
