K4M56163LG - 2M x 16Bit x 4 Banks Mobile SDRAM

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4M56163LG
Manufacturer	Samsung semiconductor
File Size	139.94 KB
Description	2M x 16Bit x 4 Banks Mobile SDRAM
Datasheet	K4M56163LG Datasheet
Additional preview pages of the K4M56163LG datasheet.

Product details

Description

The K4M56163LG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology.

Features

2.5V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR (Parti.

📁 Similar Datasheet

K4M56163PE-F1L - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung)
K4M56163PE-F90 - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung)
K4M56163PE-R - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung)
K4M56163PE-RG - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung)
K4M563233D - 8Mx32 Mobile SDRAM 90FBGA (Samsung)
K4M511533E - Mobile-SDRAM (Samsung)
K4M511533E-C - Mobile-SDRAM (Samsung)
K4M511533E-F1H - Mobile-SDRAM (Samsung)

Other Datasheets by Samsung semiconductor

K4M561633G - 4M x 16Bit x 4 Banks Mobile SDRAM
K4M56163PG - 4M x 16Bit x 4 Banks Mobile SDRAM
K4M563233E - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M563233G - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323PG-C - 2M x 32Bit x 4 Banks Mobile SDRAM

Published: Mar 16, 2007 |