K4M56163PE-R - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

Product Overview

Samsung

Datasheet Details

Part number	K4M56163PE-R
Manufacturer	Samsung
File Size	112.60 KB
Description	4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Datasheet	K4M56163PE-R Datasheet
Additional preview pages of the K4M56163PE-R datasheet.

Product details

Description

The K4M56163PE is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

1.8V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR (Parti.

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Published: Apr 25, 2005 |