K4M56163PG Datasheet | Samsung Semiconductor

FEATURES - 1.8V power supply. - LVCMOS patible with multiplexed address. - Four banks operation. - MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). - EMRS cycle with address key programs. - All inputs are sampled at the positive going edge of the system clock. - Burst read single-bit write operation. - Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature pensated Self Refresh) -. DS (Driver Strength) -. DPD (Deep Power Down) - DQM for masking. - Auto refresh. - - - - 64ms refresh period (8K cycle) mercial Temperature Operation (-25°C ~ 70°C). Extended Temperature Operation (-25°C ~ 85°C). 54Balls FBGA ( -RXXX -Pb, -BXXX -Pb Free). Mobile SDRAM GENERAL DESCRIPTION The K4M56163PG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications. ORDERING INFORMATION Part No. K4M56163PG-R(B)E/G/C/F75 K4M56163PG-R(B)E/G/C/F90 K4M56163PG-R(B)E/G/C/F1L Max Freq. 133MHz(CL3), 83MHz(CL2) 111MHz(CL3), 83MHz(CL2) 111MHz(CL3)- 1, 66MHz(CL2) LVCMOS 54 FBGA Pb (Pb Free) Interface Package - R(B)E/G : Normal/ Low Power, Extended Temperature(-25°C ~ 85°C) - R(B)C/F : Normal/ Low Power, mercial Temperature(-25°C ~ 70°C) Notes : 1. In case of 40MHz Frequency, CL1 can be supported. Address configuration Organization 16M x 16 Bank BA0, BA1 Row A0 - A12 Column Address A0 - A8 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL...