K4M56323LE Datasheet | Samsung Semiconductor

FEATURES - 2.5V power supply. - LVCMOS patible with multiplexed address. - Four banks operation. - MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). - EMRS cycle with address key programs. - All inputs are sampled at the positive going edge of the system clock. - Burst read single-bit write operation. - Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature pensated Self Refresh) - DQM for masking. - Auto refresh. - - - - 64ms refresh period (4K cycle). mercial Temperature Operation (-25°C ~ 70°C). Extended Temperature Operation (-25°C ~ 85°C). 2Chips DDP 90Balls FBGA with 0.8mm ball pitch ( -MXXX : Leaded, -EXXX : Lead Free). Mobile-SDRAM GENERAL DESCRIPTION The K4M56323LE is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications. Data Shee ORDERING INFORMATION Part No. K4M56323LE-M(E)E/N/S/C/L/R80 K4M56323LE-M(E)E/N/S/C/L/R1H K4M56323LE-M(E)E/N/S/C/L/R1L . Max Freq. 125MHz(CL=3) 105MHz(CL=2) 105MHz(CL=3)- 1 LVCMOS 90 FBGA Leaded (Lead Free) Interface Package - M(E)E/N/S : Normal / Low / Super Low Power, Extended Temperature(-25°C ~ 85°C) - M(E)C/L/R : Normal / Low / Super Low Power, mercial Temperature(-25°C ~ 70°C) NOTES : 1. In case of 40MHz Frequency, CL1 can be supported. 2. Samsung shall not offer for sale or sell either directly or through and third-party proxy, and DRAM memory products that include "Multi-Die Plastic DRAM" for use as ponents in general and scientific puters such as, by...