K4R881869M-NbCcG6 - 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM

This page provides the datasheet information for the K4R881869M-NbCcG6, a member of the K4R 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM family.

Datasheet Summary

Description

Signal SIO1,SIO0 I/O I/O Type CMOSa # Pins 2 Description Serial input/output.

Pins for reading from and writing to the control registers using a serial access protocol.

Also used for power management.

Features

for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage/bandwidth or for error correction. Preliminary Direct RDRAM™.

Samsung semiconductor

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Datasheet Details

Part number	K4R881869M-NbCcG6
Manufacturer	Samsung semiconductor
File Size	3.99 MB
Description	288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
Datasheet	K4R881869M-NbCcG6 Datasheet
Additional preview pages of the K4R881869M-NbCcG6 datasheet.

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Full PDF Text Transcription

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K4R881869M Preliminary Direct RDRAM™ 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 0.9 January 2000 Page -1 Rev. 0.9 Jan. 2000 K4R881869M Revision History Version 0.9 (January 2000) - Preliminary - First Copy - Based on the Rambus Datasheet 0.9ver. Preliminary Direct RDRAM™ Page 0 Rev. 0.9 Jan. 2000 K4R881869M Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 288Mbit Direct Rambus DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits.

Published: Apr 7, 2005 |