K4R881869M-NbCcG6 Overview
Key Features
- Highest sustained bandwidth per DRAM device
- 1.6GB/s sustained data transfer rate
- Separate cont
| Part | K4R881869M-NbCcG6 |
|---|---|
| Description | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| Manufacturer | Samsung Semiconductor |
| Size | 3.99 MB |
Similar Parts
| Part Number | Manufacturer | Description |
|---|---|---|
| K4R271669B | Samsung Semiconductor | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
| K4R441869B | Samsung Semiconductor | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
| K4R761869A | Samsung Semiconductor | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |